H5N5012P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N5012P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 385 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.225 Ohm

Encapsulados: TO3P

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H5N5012P datasheet

 ..1. Size:69K  renesas
 rej03g0378 h5n5012p.pdf pdf_icon

H5N5012P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:99K  renesas
 rej03g1117 h5n5015pds.pdf pdf_icon

H5N5012P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:153K  renesas
 rej03g0175 h5n5016pl.pdf pdf_icon

H5N5012P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:146K  renesas
 h5n5016pl-e0-e.pdf pdf_icon

H5N5012P

Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1.

MOSTRAR MÁS

Otros transistores... H5N3008P, H5N3011P, H5N5001FM, H5N5006DL, H5N5006DS, H5N5006FM, H5N5006LS, H5N5007P, IRF9540, H5N5015P, H5N5016PL, H5N6001P, H7N0203AB, H7N0307AB, H7N0307LD, H7N0307LM, H7N0307LS