H5N5012P Specs and Replacement
Type Designator: H5N5012P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 385 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TO3P
H5N5012P substitution
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H5N5012P datasheet
rej03g0378 h5n5012p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1117 h5n5015pds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g0175 h5n5016pl.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
h5n5016pl-e0-e.pdf
Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1.... See More ⇒
Detailed specifications: H5N3008P , H5N3011P , H5N5001FM , H5N5006DL , H5N5006DS , H5N5006FM , H5N5006LS , H5N5007P , IRF9540 , H5N5015P , H5N5016PL , H5N6001P , H7N0203AB , H7N0307AB , H7N0307LD , H7N0307LM , H7N0307LS .
Keywords - H5N5012P MOSFET specs
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H5N5012P substitution
H5N5012P replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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