Справочник MOSFET. H5N5012P

 

H5N5012P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: H5N5012P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 385 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.225 Ohm
   Тип корпуса: TO3P
     - подбор MOSFET транзистора по параметрам

 

H5N5012P Datasheet (PDF)

 ..1. Size:69K  renesas
rej03g0378 h5n5012p.pdfpdf_icon

H5N5012P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:99K  renesas
rej03g1117 h5n5015pds.pdfpdf_icon

H5N5012P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:153K  renesas
rej03g0175 h5n5016pl.pdfpdf_icon

H5N5012P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:146K  renesas
h5n5016pl-e0-e.pdfpdf_icon

H5N5012P

Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1.

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ZVP0535A

 

 
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