H5N6001P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N6001P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO3P

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H5N6001P datasheet

 0.1. Size:98K  renesas
 rej03g1118 h5n6001pds.pdf pdf_icon

H5N6001P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:408K  cn haohai electr
 h5n60p h5n60f.pdf pdf_icon

H5N6001P

5N60 Series N-Channel MOSFET 4.5A, 600V, N H FQP5N60C H5N60P P TO-220AB 5N60 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF5N60C H5N60F F TO-220FP 5N60 Series Pin Assignment Features ID=4.5A Originative New De

 9.2. Size:412K  cn haohai electr
 h5n60u h5n60d.pdf pdf_icon

H5N6001P

5N60 Series N-Channel MOSFET 5A, 600V, N H FQU5N60C H5N60U U TO-251 80 / 4Kpcs/ 24Kpcs 5N60 HAOHAI FQD5N60C H5N60D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 5N60 Series Pin Assignment Features ID=3.6A Ori

Otros transistores... H5N5006DL, H5N5006DS, H5N5006FM, H5N5006LS, H5N5007P, H5N5012P, H5N5015P, H5N5016PL, STP75NF75, H7N0203AB, H7N0307AB, H7N0307LD, H7N0307LM, H7N0307LS, H7N0308AB, H7N0308LD, H7N0308LM