All MOSFET. H5N6001P Datasheet

 

H5N6001P MOSFET. Datasheet pdf. Equivalent


   Type Designator: H5N6001P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO3P

 H5N6001P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N6001P Datasheet (PDF)

 0.1. Size:98K  renesas
rej03g1118 h5n6001pds.pdf

H5N6001P H5N6001P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:408K  cn haohai electr
h5n60p h5n60f.pdf

H5N6001P H5N6001P

5N60 SeriesN-Channel MOSFET4.5A, 600V, N H FQP5N60C H5N60P P: TO-220AB5N60 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF5N60C H5N60F F: TO-220FP5N60 Series Pin AssignmentFeaturesID=4.5AOriginative New De

 9.2. Size:412K  cn haohai electr
h5n60u h5n60d.pdf

H5N6001P H5N6001P

5N60 SeriesN-Channel MOSFET5A, 600V, N H FQU5N60C H5N60U U: TO-251 80/ 4Kpcs/ 24Kpcs5N60 HAOHAIFQD5N60C H5N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/5N60 Series Pin AssignmentFeaturesID=3.6AOri

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTGS3446T1

 

 
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