H7P1006MD90TZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H7P1006MD90TZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO92MOD
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H7P1006MD90TZ Datasheet (PDF)
rej03g1601 h7p1002dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... H7N1005LD , H7N1005LM , H7N1005LS , H7N1009MD90TZ , H7P0601DL , H7P0601DS , H7P1002DL , H7P1002DS , IRFB7545 , H8N0801AB , HAT1016R , HAT1020R , HAT1021R , HAT1023R , HAT1024R , HAT1025R , HAT1026R .
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