All MOSFET. H7P1006MD90TZ Datasheet

 

H7P1006MD90TZ Datasheet and Replacement


   Type Designator: H7P1006MD90TZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO92MOD
 

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H7P1006MD90TZ Datasheet (PDF)

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H7P1006MD90TZ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: H7N1005LD , H7N1005LM , H7N1005LS , H7N1009MD90TZ , H7P0601DL , H7P0601DS , H7P1002DL , H7P1002DS , IRFB7545 , H8N0801AB , HAT1016R , HAT1020R , HAT1021R , HAT1023R , HAT1024R , HAT1025R , HAT1026R .

History: R4008AND

Keywords - H7P1006MD90TZ MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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