H7P1006MD90TZ Datasheet and Replacement
Type Designator: H7P1006MD90TZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id|ⓘ - Maximum Drain Current: 1.8 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO92MOD
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H7P1006MD90TZ Datasheet (PDF)
rej03g1601 h7p1002dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: TK2P60D | IRFBG20



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