BUZ45 Todos los transistores

 ..1. Size:287K  st
 buz45.pdf

 ..2. Size:204K  inchange semiconductor
 buz45.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ45 FEATURES Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

 0.1. Size:271K  st
 buz45a.pdf

 0.2. Size:42K  harris semi
 buz45b.pdf

BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power Features MOSFET 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500 (BUZ45 field effect transistor designed for applications such as SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers,

 0.3. Size:222K  inchange semiconductor
 buz45b.pdf

isc N-Channel Mosfet Transistor BUZ45B FEATURES Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo

 0.4. Size:222K  inchange semiconductor
 buz45a.pdf

isc N-Channel Mosfet Transistor BUZ45A FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo