BUZ45 Todos los transistores

 

BUZ45 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ45
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 9.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO3

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BUZ45 Datasheet (PDF)

 ..1. Size:287K  st
buz45.pdf

BUZ45 BUZ45

 ..2. Size:204K  inchange semiconductor
buz45.pdf

BUZ45 BUZ45

INCHANGE Semiconductorisc N-Channel Mosfet Transistor BUZ45FEATURESStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

 0.1. Size:271K  st
buz45a.pdf

BUZ45 BUZ45

 0.2. Size:42K  harris semi
buz45b.pdf

BUZ45 BUZ45

BUZ45BSemiconductorData Sheet October 1998 File Number 2259.110A, 500V, 0.500 Ohm, N-Channel Power FeaturesMOSFET 10A, 500V[ /TitleThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500(BUZ45field effect transistor designed for applications such as SOA is Power Dissipation LimitedB)switching regulators, switching converters, motor drivers,

 0.3. Size:222K  inchange semiconductor
buz45b.pdf

BUZ45 BUZ45

isc N-Channel Mosfet Transistor BUZ45BFEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

 0.4. Size:222K  inchange semiconductor
buz45a.pdf

BUZ45 BUZ45

isc N-Channel Mosfet Transistor BUZ45AFEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

Otros transistores... BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 , BUZ36 , BUZ41A , BUZ42 , 2SK3878 , BUZ45A , BUZ46 , BUZ50A , BUZ50A-220M , BUZ50A-220SM , BUZ50A-220TM , BUZ50ASM , BUZ50A-TO220M .

 

 
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