BUZ45 PDF and Equivalents Search

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ45 FEATURES Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay... See More ⇒

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BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power Features MOSFET 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500 (BUZ45 field effect transistor designed for applications such as SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers,... See More ⇒

isc N-Channel Mosfet Transistor BUZ45B FEATURES Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo... See More ⇒

isc N-Channel Mosfet Transistor BUZ45A FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo... See More ⇒