BUZ45 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductorisc N-Channel Mosfet Transistor BUZ45FEATURESStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

BUZ45BSemiconductorData Sheet October 1998 File Number 2259.110A, 500V, 0.500 Ohm, N-Channel Power FeaturesMOSFET 10A, 500V[ /TitleThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500(BUZ45field effect transistor designed for applications such as SOA is Power Dissipation LimitedB)switching regulators, switching converters, motor drivers,

isc N-Channel Mosfet Transistor BUZ45BFEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

isc N-Channel Mosfet Transistor BUZ45AFEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo