BUZ45 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ45 FEATURES Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power Features MOSFET 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500 (BUZ45 field effect transistor designed for applications such as SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers,

isc N-Channel Mosfet Transistor BUZ45B FEATURES Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo

isc N-Channel Mosfet Transistor BUZ45A FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo