RJK0206DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0206DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.7 nS

Cossⓘ - Capacitancia de salida: 1600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: WPAK

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RJK0206DPA datasheet

 0.1. Size:79K  renesas
 rej03g1923 rjk0206dpads.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.1. Size:85K  renesas
 r07ds0238ej rjk0202dsp.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching Jan 05, 2011 Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8

 8.2. Size:79K  renesas
 rej03g1922 rjk0204dpads.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.3. Size:79K  renesas
 rej03g1924 rjk0208dpads.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

MOSTRAR MÁS

Otros transistores... HS54095TZ-E, HS56021, RJJ0101DPD, RJJ0315DPA, RJJ0621DPP, RJJ1011DPD, RJK0202DSP, RJK0204DPA, AOD4184A, RJK0208DPA, RJK0210DPA, RJK0211DPA, RJK0212DPA, RJK0213DPA, RJK0214DPA, RJK0215DPA, RJK0216DPA