RJK0206DPA Todos los transistores

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RJK0206DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0206DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 65 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 70 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 8.7 nS

Conductancia de drenaje-sustrato (Cd): 1600 pF

Resistencia drenaje-fuente RDS(on): 0.0018 Ohm

Empaquetado / Estuche: WPAK

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RJK0206DPA Datasheet (PDF)

1.1. rej03g1923 rjk0206dpads.pdf Size:79K _renesas

RJK0206DPA
RJK0206DPA

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.5 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

4.1. rej03g1924 rjk0208dpads.pdf Size:79K _renesas

RJK0206DPA
RJK0206DPA

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.6 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

4.2. rej03g1922 rjk0204dpads.pdf Size:79K _renesas

RJK0206DPA
RJK0206DPA

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.2 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

 4.3. r07ds0238ej rjk0202dsp.pdf Size:85K _renesas

RJK0206DPA
RJK0206DPA

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching Jan 05, 2011 Features ? High speed switching ? Capable of 2.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.0 m? typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 6 7 8 D D

Otros transistores... HS54095TZ-E , HS56021 , RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , 2SK3562 , RJK0208DPA , RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA .

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