RJK0206DPA - параметры транзистора MOSFET, его аналоги, datasheet

RJK0206DPA Datasheet (PDF)

0.1. Size:79K renesas
rej03g1923 rjk0206dpads.pdf pdf_icon

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

8.1. Size:85K renesas
r07ds0238ej rjk0202dsp.pdf pdf_icon

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220Silicon N Channel Power MOS FET Rev.2.20Power Switching Jan 05, 2011Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

8.2. Size:79K renesas
rej03g1922 rjk0204dpads.pdf pdf_icon

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210Power Switching Rev.2.10Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

8.3. Size:79K renesas
rej03g1924 rjk0208dpads.pdf pdf_icon

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Другие MOSFET... HS54095TZ-E , HS56021 , RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , HY1906P , RJK0208DPA , RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA .