RJK0206DPA Datasheet. Specs and Replacement

Type Designator: RJK0206DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.7 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: WPAK

RJK0206DPA substitution

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RJK0206DPA datasheet

 0.1. Size:79K  renesas
 rej03g1923 rjk0206dpads.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES... See More ⇒

 8.1. Size:85K  renesas
 r07ds0238ej rjk0202dsp.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching Jan 05, 2011 Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8... See More ⇒

 8.2. Size:79K  renesas
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RJK0206DPA

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES... See More ⇒

 8.3. Size:79K  renesas
 rej03g1924 rjk0208dpads.pdf pdf_icon

RJK0206DPA

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES... See More ⇒

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Detailed specifications: HS54095TZ-E, HS56021, RJJ0101DPD, RJJ0315DPA, RJJ0621DPP, RJJ1011DPD, RJK0202DSP, RJK0204DPA, AOD4184A, RJK0208DPA, RJK0210DPA, RJK0211DPA, RJK0212DPA, RJK0213DPA, RJK0214DPA, RJK0215DPA, RJK0216DPA

Keywords - RJK0206DPA MOSFET specs

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