RJK0223DNS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0223DNS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm

Encapsulados: HWSON

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RJK0223DNS datasheet

 ..1. Size:75K  renesas
 r07ds0126ej rjk0223dns.pdf pdf_icon

RJK0223DNS

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030 (Previous REJ03G1952-0020) Rev.0.30 Sep 02, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008JD-A (Package name HWSON304

 8.1. Size:143K  renesas
 r07ds0259ej rjk0225dns.pdf pdf_icon

RJK0223DNS

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching Mar 03, 2011 Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name 8pin HVSON(3333)

 8.2. Size:63K  renesas
 r07ds0125ej rjk0222dns.pdf pdf_icon

RJK0223DNS

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030 (Previous REJ03G1951-0020) Rev.0.30 Sep 06, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008JD-A (Package name HWSON304

 8.3. Size:165K  renesas
 r07ds0260ej rjk0226dns.pdf pdf_icon

RJK0223DNS

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag

MOSTRAR MÁS

Otros transistores... RJK0210DPA, RJK0211DPA, RJK0212DPA, RJK0213DPA, RJK0214DPA, RJK0215DPA, RJK0216DPA, RJK0222DNS, 20N60, RJK0225DNS, RJK0226DNS, RJK0230DPA, RJK0301DPB, RJK0301DPC, RJK0302DPB, RJK0302DPC, RJK0303DPB