RJK0223DNS Todos los transistores

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RJK0223DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0223DNS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 8 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0076 Ohm

Empaquetado / Estuche: HWSON

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RJK0223DNS Datasheet (PDF)

1.1. r07ds0126ej rjk0223dns.pdf Size:75K _renesas

RJK0223DNS
RJK0223DNS

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030 (Previous: REJ03G1952-0020) Rev.0.30 Sep 02, 2010 Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package name: HWSON3046-8 Dual) 2

4.1. r07ds0259ej rjk0225dns.pdf Size:143K _renesas

RJK0223DNS
RJK0223DNS

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching Mar 03, 2011 Features ? Very High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 7 8 D D D D

4.2. r07ds0260ej rjk0226dns.pdf Size:165K _renesas

RJK0223DNS
RJK0223DNS

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.3 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline Package name: 8pin HVSON(

 4.3. r07ds0125ej rjk0222dns.pdf Size:63K _renesas

RJK0223DNS
RJK0223DNS

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030 (Previous: REJ03G1951-0020) Rev.0.30 Sep 06, 2010 Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package name: HWSON3046-8 Dual) 2

Otros transistores... RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA , RJK0222DNS , IRF840 , RJK0225DNS , RJK0226DNS , RJK0230DPA , RJK0301DPB , RJK0301DPC , RJK0302DPB , RJK0302DPC , RJK0303DPB .

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