RJK0223DNS
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK0223DNS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.2
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076
Ohm
Package: HWSON
RJK0223DNS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK0223DNS
Datasheet (PDF)
..1. Size:75K renesas
r07ds0126ej rjk0223dns.pdf
Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030(Previous: REJ03G1952-0020)Rev.0.30Sep 02, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304
8.1. Size:143K renesas
r07ds0259ej rjk0225dns.pdf
Preliminary Datasheet RJK0225DNS R07DS0259EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching Mar 03, 2011Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name: 8pin HVSON(3333)
8.2. Size:63K renesas
r07ds0125ej rjk0222dns.pdf
Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030(Previous: REJ03G1951-0020)Rev.0.30Sep 06, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304
8.3. Size:165K renesas
r07ds0260ej rjk0226dns.pdf
Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110Rev.1.10Mar 03, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag
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