RJK0225DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJK0225DNS Datasheet (PDF)

..1. Size:143K renesas
r07ds0259ej rjk0225dns.pdf pdf_icon

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching Mar 03, 2011Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name: 8pin HVSON(3333)

8.1. Size:75K renesas
r07ds0126ej rjk0223dns.pdf pdf_icon

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030(Previous: REJ03G1952-0020)Rev.0.30Sep 02, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

8.2. Size:63K renesas
r07ds0125ej rjk0222dns.pdf pdf_icon

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030(Previous: REJ03G1951-0020)Rev.0.30Sep 06, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

8.3. Size:165K renesas
r07ds0260ej rjk0226dns.pdf pdf_icon

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110Rev.1.10Mar 03, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag

Otros transistores... RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA , RJK0222DNS , RJK0223DNS , IRF540N , RJK0226DNS , RJK0230DPA , RJK0301DPB , RJK0301DPC , RJK0302DPB , RJK0302DPC , RJK0303DPB , RJK0303DPC .