RJK0225DNS MOSFET Datasheet: N-Ch, 25V, 30A. Full specification with pinout and replacement list

RJK0225DNS Specs and Replacement

Type Designator: RJK0225DNS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.9 nS

Cossⓘ - Output Capacitance: 545 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: HVSON

RJK0225DNS substitution

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RJK0225DNS datasheet

..1. Size:143K renesas
r07ds0259ej rjk0225dns.pdf pdf_icon

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching Mar 03, 2011 Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name 8pin HVSON(3333)... See More ⇒

8.1. Size:75K renesas
r07ds0126ej rjk0223dns.pdf pdf_icon

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030 (Previous REJ03G1952-0020) Rev.0.30 Sep 02, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008JD-A (Package name HWSON304... See More ⇒

8.2. Size:63K renesas
r07ds0125ej rjk0222dns.pdf pdf_icon

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030 (Previous REJ03G1951-0020) Rev.0.30 Sep 06, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008JD-A (Package name HWSON304... See More ⇒

8.3. Size:165K renesas
r07ds0260ej rjk0226dns.pdf pdf_icon

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag... See More ⇒

Detailed specifications: RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA , RJK0222DNS , RJK0223DNS , IRF540N , RJK0226DNS , RJK0230DPA , RJK0301DPB , RJK0301DPC , RJK0302DPB , RJK0302DPC , RJK0303DPB , RJK0303DPC .