RJK0329DPB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0329DPB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 55 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 980 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: LFPAK

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RJK0329DPB datasheet

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 r07ds0265ej rjk0329dpb.pdf pdf_icon

RJK0329DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

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 rjk0329dpb-01.pdf pdf_icon

RJK0329DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

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 rjk0329dpb-00.pdf pdf_icon

RJK0329DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 rjk0323jpd.pdf pdf_icon

RJK0329DPB

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code PRSS0004ZD-C (Package name DPAK (S)) 2, 4 4 D 1

MOSTRAR MÁS

Otros transistores... RJK0304DPB, RJK0304DPC, RJK0305DPB, RJK0305DPC, RJK0316DPA, RJK0316DSP, RJK0317DSP, RJK0328DPB, 2N7000, RJK0330DPB, RJK0331DPB, RJK0332DPB, RJK0346DPA, RJK0348DPA, RJK0348DSP, RJK0349DPA, RJK0349DSP