RJK0329DPB Todos los transistores

 

RJK0329DPB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0329DPB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 60 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 55 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 1.2 V
   Carga de la puerta (Qg): 35 nC
   Tiempo de subida (tr): 4 nS
   Conductancia de drenaje-sustrato (Cd): 980 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0023 Ohm
   Paquete / Cubierta: LFPAK

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RJK0329DPB Datasheet (PDF)

 ..1. Size:84K  renesas
r07ds0265ej rjk0329dpb.pdf

RJK0329DPB RJK0329DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

 0.1. Size:81K  renesas
rjk0329dpb-01.pdf

RJK0329DPB RJK0329DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

 0.2. Size:124K  renesas
rjk0329dpb-00.pdf

RJK0329DPB RJK0329DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:113K  renesas
rjk0323jpd.pdf

RJK0329DPB RJK0329DPB

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 44D1

 8.2. Size:135K  renesas
rej03g1637 rjk0328dpbds.pdf

RJK0329DPB RJK0329DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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