RJK0329DPB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RJK0329DPB
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 55 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 35 nC
Время нарастания (tr): 4 ns
Выходная емкость (Cd): 980 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm
Тип корпуса: LFPAK
Аналог (замена) для RJK0329DPB
RJK0329DPB Datasheet (PDF)
r07ds0265ej rjk0329dpb.pdf
Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R
rjk0329dpb-01.pdf
Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R
rjk0329dpb-00.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk0323jpd.pdf
Preliminary Datasheet RJK0323JPD R07DS0334EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 44D1
rej03g1637 rjk0328dpbds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
