RJK0329DPB Datasheet. Specs and Replacement

Type Designator: RJK0329DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: LFPAK

RJK0329DPB substitution

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RJK0329DPB datasheet

 ..1. Size:84K  renesas
 r07ds0265ej rjk0329dpb.pdf pdf_icon

RJK0329DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R... See More ⇒

 0.1. Size:81K  renesas
 rjk0329dpb-01.pdf pdf_icon

RJK0329DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R... See More ⇒

 0.2. Size:124K  renesas
 rjk0329dpb-00.pdf pdf_icon

RJK0329DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:113K  renesas
 rjk0323jpd.pdf pdf_icon

RJK0329DPB

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code PRSS0004ZD-C (Package name DPAK (S)) 2, 4 4 D 1... See More ⇒

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Detailed specifications: RJK0304DPB, RJK0304DPC, RJK0305DPB, RJK0305DPC, RJK0316DPA, RJK0316DSP, RJK0317DSP, RJK0328DPB, 2N7000, RJK0330DPB, RJK0331DPB, RJK0332DPB, RJK0346DPA, RJK0348DPA, RJK0348DSP, RJK0349DPA, RJK0349DSP

Keywords - RJK0329DPB MOSFET specs

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