RJK5030DPD Todos los transistores

 

RJK5030DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK5030DPD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: MP3A
 

 Búsqueda de reemplazo de RJK5030DPD MOSFET

   - Selección ⓘ de transistores por parámetros

 

RJK5030DPD Datasheet (PDF)

 ..1. Size:68K  renesas
r07ds0050ej rjk5030dpd.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200(Previous: REJ03G1913-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 22, 2010Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3.

 5.1. Size:77K  renesas
r07ds0227ej rjk5030dpp.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolu

 8.1. Size:94K  renesas
r07ds0417ej rjk5031dpd.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 23, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S

 8.2. Size:70K  renesas
r07ds0179ej rjk5033dpd.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 05, 2010Features Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S

Otros transistores... RJK5013DPK , RJK5014DPK , RJK5015DPK , RJK5015DPM , RJK5018DPK , RJK5020DPK , RJK5026DPE , RJK5026DPP-M0 , AO3401 , RJK5030DPP-M0 , RJK5031DPD , RJK5033DPD , RJK5033DPP-M0 , RJK6002DPD , RJK6002DPE , RJK6006DPD , RJK6011DJE .

History: CSD17302Q5A | BUZ54A | PE597BA | CEM26138 | NCEA60ND18G | SM4033NHKP

 

 
Back to Top

 


 
.