RJK5030DPD PDF and Equivalents Search

 

RJK5030DPD Specs and Replacement

Type Designator: RJK5030DPD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: MP3A

RJK5030DPD substitution

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RJK5030DPD datasheet

 ..1. Size:68K  renesas
 r07ds0050ej rjk5030dpd.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3.... See More ⇒

 5.1. Size:77K  renesas
 r07ds0227ej rjk5030dpp.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolu... See More ⇒

 8.1. Size:94K  renesas
 r07ds0417ej rjk5031dpd.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S... See More ⇒

 8.2. Size:70K  renesas
 r07ds0179ej rjk5033dpd.pdf pdf_icon

RJK5030DPD

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S ... See More ⇒

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Detailed specifications: RJK5013DPK , RJK5014DPK , RJK5015DPK , RJK5015DPM , RJK5018DPK , RJK5020DPK , RJK5026DPE , RJK5026DPP-M0 , P60NF06 , RJK5030DPP-M0 , RJK5031DPD , RJK5033DPD , RJK5033DPP-M0 , RJK6002DPD , RJK6002DPE , RJK6006DPD , RJK6011DJE .

History: SI2301DS

Keywords - RJK5030DPD MOSFET specs

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