RJK6006DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RJK6006DPD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 77.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: MP3A

Búsqueda de reemplazo de MOSFET RJK6006DPD

RJK6006DPD Datasheet (PDF)

0.1. Size:74K renesas
rej03g1935 rjk6006dpdds.pdf

Preliminary Datasheet RJK6006DPD REJ03G1935-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3

8.1. Size:115K renesas
rej03g1483 rjk6002dpdds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:98K renesas
rjk6002dpe.pdf

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jun 21, 2012Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4.

8.3. Size:59K renesas
rjk6002dje.pdf

Preliminary DatasheetRJK6002DJE R07DS0845EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321

8.4. Size:90K renesas
rjk6002dph-e0.pdf

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Mar 21, 2013Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: