RJK6006DPD Todos los transistores

 

RJK6006DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK6006DPD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 77.6 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 1.6 Ohm

Empaquetado / Estuche: MP3A

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RJK6006DPD Datasheet (PDF)

1.1. rej03g1935 rjk6006dpdds.pdf Size:74K _renesas

RJK6006DPD
RJK6006DPD

Preliminary Datasheet RJK6006DPD REJ03G1935-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features ? Low on-state resistance RDS(on) = 1.4 ? typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolut

4.1. rej03g1483 rjk6002dpdds.pdf Size:115K _renesas

RJK6006DPD
RJK6006DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rjk6002dpe.pdf Size:98K _renesas

RJK6006DPD
RJK6006DPD

 Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.

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