RJK6006DPD Datasheet. Specs and Replacement

Type Designator: RJK6006DPD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: MP3A

RJK6006DPD substitution

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RJK6006DPD datasheet

 0.1. Size:74K  renesas
 rej03g1935 rjk6006dpdds.pdf pdf_icon

RJK6006DPD

Preliminary Datasheet RJK6006DPD REJ03G1935-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 ... See More ⇒

 8.1. Size:115K  renesas
 rej03g1483 rjk6002dpdds.pdf pdf_icon

RJK6006DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:98K  renesas
 rjk6002dpe.pdf pdf_icon

RJK6006DPD

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.... See More ⇒

 8.3. Size:59K  renesas
 rjk6002dje.pdf pdf_icon

RJK6006DPD

Preliminary Datasheet RJK6002DJE R07DS0845EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1... See More ⇒

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Detailed specifications: RJK5026DPP-M0, RJK5030DPD, RJK5030DPP-M0, RJK5031DPD, RJK5033DPD, RJK5033DPP-M0, RJK6002DPD, RJK6002DPE, IRFZ48N, RJK6011DJE, RJK6012DPE, RJK6013DPE, RJK6014DPK, RJK6015DPK, RJK6015DPM, RJK6018DPK, RJK6018DPM

Keywords - RJK6006DPD MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.