RJK6006DPD datasheet, аналоги, основные параметры

Наименование производителя: RJK6006DPD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 77.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17 ns

Cossⓘ - Выходная емкость: 70 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm

Тип корпуса: MP3A

Аналог (замена) для RJK6006DPD

- подборⓘ MOSFET транзистора по параметрам

 

RJK6006DPD даташит

 0.1. Size:74K  renesas
 rej03g1935 rjk6006dpdds.pdf pdf_icon

RJK6006DPD

Preliminary Datasheet RJK6006DPD REJ03G1935-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3

 8.1. Size:115K  renesas
 rej03g1483 rjk6002dpdds.pdf pdf_icon

RJK6006DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:98K  renesas
 rjk6002dpe.pdf pdf_icon

RJK6006DPD

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.

 8.3. Size:59K  renesas
 rjk6002dje.pdf pdf_icon

RJK6006DPD

Preliminary Datasheet RJK6002DJE R07DS0845EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1

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