BUZ80FI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ80FI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 42 nC
   Cossⓘ - Capacitancia de salida: 850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: ISOWATT220

Búsqueda de reemplazo de MOSFET BUZ80FI

BUZ80FI Datasheet (PDF)

..1. Size:196K st
buz80fi.pdf

BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V

..2. Size:226K inchange semiconductor
buz80fi.pdf

isc N-Channel Mosfet Transistor BUZ80FIFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25

9.1. Size:105K st
buz80.pdf

BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V

9.2. Size:107K st
buz80a.pdf

BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V

9.3. Size:197K st
buz80afi.pdf

BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V

9.4. Size:180K siemens
buz80.pdf

BUZ 80SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80 800 V 3.1 A 4 TO-220 AB C67078-S1309-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 3.1Pulsed drain current IDpulsTC = 25 C 12.5Avalanche current,limited by Tjmax IAR

9.5. Size:176K siemens
buz80a.pdf

BUZ 80ASIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80A 800 V 3 A 3 TO-220 AB C67078-A1309-A3Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 800 VVDGRDrain-gate voltageRGS = 20 k 800Continuous drain current ID ATC = 50 C 3Pulsed drain current IDpulsTC =

9.6. Size:229K inchange semiconductor
buz80.pdf

isc N-Channel Mosfet Transistor BUZ80FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25

9.7. Size:229K inchange semiconductor
buz80a.pdf

isc N-Channel Mosfet Transistor BUZ80AFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

Otros transistores... BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , IRFZ24N , BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D .

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