BUZ80FI
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ80FI
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
Cossⓘ -
Output Capacitance: 850
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
ISOWATT220
BUZ80FI
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ80FI
Datasheet (PDF)
..1. Size:196K st
buz80fi.pdf 
BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V
..2. Size:226K inchange semiconductor
buz80fi.pdf
isc N-Channel Mosfet Transistor BUZ80FIFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25
9.1. Size:105K st
buz80.pdf
BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V
9.2. Size:107K st
buz80a.pdf
BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V
9.3. Size:197K st
buz80afi.pdf
BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V
9.4. Size:180K siemens
buz80.pdf
BUZ 80SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80 800 V 3.1 A 4 TO-220 AB C67078-S1309-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 3.1Pulsed drain current IDpulsTC = 25 C 12.5Avalanche current,limited by Tjmax IAR
9.5. Size:176K siemens
buz80a.pdf
BUZ 80ASIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 80A 800 V 3 A 3 TO-220 AB C67078-A1309-A3Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 800 VVDGRDrain-gate voltageRGS = 20 k 800Continuous drain current ID ATC = 50 C 3Pulsed drain current IDpulsTC =
9.6. Size:229K inchange semiconductor
buz80.pdf
isc N-Channel Mosfet Transistor BUZ80FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25
9.7. Size:229K inchange semiconductor
buz80a.pdf
isc N-Channel Mosfet Transistor BUZ80AFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
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