BUZ80FI Datasheet and Replacement
Type Designator: BUZ80FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: ISOWATT220
BUZ80FI substitution
BUZ80FI Datasheet (PDF)
buz80fi.pdf
BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V
buz80fi.pdf
isc N-Channel Mosfet Transistor BUZ80FIFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective application100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSwitching mode power suppliesDC-DC & DC-AC converterABSOLUTE MAXIMUM RATINGS(T =25
buz80.pdf
BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V
buz80a.pdf
BUZ80ABUZ80AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80A 800 V
Datasheet: BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , IRFP250 , BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D .
History: FQD2P40 | BUZ46 | FQD2N80 | APT4020BVR | FQD3N60CTMWS | BUZ90 | RUH4040M3
Keywords - BUZ80FI MOSFET datasheet
BUZ80FI cross reference
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History: FQD2P40 | BUZ46 | FQD2N80 | APT4020BVR | FQD3N60CTMWS | BUZ90 | RUH4040M3
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