All MOSFET. BUZ80FI Datasheet

 

BUZ80FI MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ80FI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Drain-Source Capacitance (Cd): 850 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: ISOWATT220

BUZ80FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ80FI Datasheet (PDF)

1.1. buz80fi.pdf Size:196K _st

BUZ80FI
BUZ80FI

BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D BUZ80 800 V < 4 ? 3.4 A BUZ80FI 800 V < 4 ? 2.1 A TYPICAL RDS(on) = 3.3 ? AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS H

5.1. buz80afi.pdf Size:197K _st

BUZ80FI
BUZ80FI

BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D BUZ80A 800 V < 3 ? 3.8 A BUZ80AFI 800 V < 3 ? 2.4 A TYPICAL RDS(on) = 2.5 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS H

5.2. buz80(thomson).pdf Size:105K _st

BUZ80FI
BUZ80FI

BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D BUZ80 800 V < 4 ? 3.4 A BUZ80FI 800 V < 4 ? 2.1 A TYPICAL RDS(on) = 3.3 ? AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS H

 5.3. buz80a(thomson).pdf Size:107K _st

BUZ80FI
BUZ80FI

BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D BUZ80A 800 V < 3 ? 3.8 A BUZ80AFI 800 V < 3 ? 2.4 A TYPICAL RDS(on) = 2.5 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS H

5.4. buz80a.pdf Size:176K _siemens

BUZ80FI
BUZ80FI

BUZ 80A SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 80A 800 V 3 A 3 ? TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 800 V VDGR Drain-gate voltage RGS = 20 k? 800 Continuous drain current ID A TC = 50 C 3 Pulsed drain current IDpuls TC = 25 C 12 Ga

 5.5. buz80.pdf Size:180K _siemens

BUZ80FI
BUZ80FI

BUZ 80 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 80 800 V 3.1 A 4 ? TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 3.1 Pulsed drain current IDpuls TC = 25 C 12.5 Avalanche current,limited by Tjmax IAR 3.1 Avalanche

Datasheet: BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 , BUZ80A , BUZ80AFI , J112 , BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D .

 

 
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