RQJ0601DGDQS Todos los transistores

 

RQJ0601DGDQS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQJ0601DGDQS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 2.8 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.124 Ohm

Empaquetado / Estuche: UPAK

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RQJ0601DGDQS Datasheet (PDF)

1.1. rej03g1266 rqj0601dgdqsds.pdf Size:101K _renesas

RQJ0601DGDQS
RQJ0601DGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. r07ds0300ej rqj0603lgd.pdf Size:98K _renesas

RQJ0601DGDQS
RQJ0601DGDQS

Preliminary Datasheet RQJ0603LGDQA R07DS0300EJ0500 (Previous: REJ03G1274-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 158 m? typ (VGS = 10 V, ID = 0.9 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 1 2

4.2. rej03g1268 rqj0602egdqsds.pdf Size:110K _renesas

RQJ0601DGDQS
RQJ0601DGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. r07ds0299ej rqj0602egd.pdf Size:83K _renesas

RQJ0601DGDQS
RQJ0601DGDQS

Preliminary Datasheet RQJ0602EGDQA R07DS0299EJ0500 (Previous: REJ03G1273-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 490 m? typ (VGS = 10 V, ID = 0.55 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2

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