RQJ0601DGDQS. Аналоги и основные параметры
Наименование производителя: RQJ0601DGDQS
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 75 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm
Аналог (замена) для RQJ0601DGDQS
- подборⓘ MOSFET транзистора по параметрам
RQJ0601DGDQS даташит
rej03g1266 rqj0601dgdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1268 rqj0602egdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0299ej rqj0602egd.pdf
Preliminary Datasheet RQJ0602EGDQA R07DS0299EJ0500 (Previous REJ03G1273-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 490 m typ (VGS = 10 V, ID = 0.55 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3
r07ds0300ej rqj0603lgd.pdf
Preliminary Datasheet RQJ0603LGDQA R07DS0300EJ0500 (Previous REJ03G1274-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 158 m typ (VGS = 10 V, ID = 0.9 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3
Другие MOSFET... RQJ0302NGDQA , RQJ0303PGDQA , RQJ0304DQDQA , RQJ0304DQDQS , RQJ0305EQDQA , RQJ0305EQDQS , RQJ0306FQDQA , RQJ0306FQDQS , IRF4905 , RQJ0602EGDQA , RQJ0602EGDQS , RQJ0603LGDQA , RQK0201QGDQA , RQK0202RGDQA , RQK0203SGDQA , RQK0204TGDQA , RQK0301FGDQS .
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Список транзисторов
Обновления
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