Справочник MOSFET. RQJ0601DGDQS

 

RQJ0601DGDQS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RQJ0601DGDQS
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm
   Тип корпуса: UPAK SC62

 Аналог (замена) для RQJ0601DGDQS

 

 

RQJ0601DGDQS Datasheet (PDF)

 0.1. Size:101K  renesas
 rej03g1266 rqj0601dgdqsds.pdf

RQJ0601DGDQS RQJ0601DGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:110K  renesas
 rej03g1268 rqj0602egdqsds.pdf

RQJ0601DGDQS RQJ0601DGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:83K  renesas
 r07ds0299ej rqj0602egd.pdf

RQJ0601DGDQS RQJ0601DGDQS

Preliminary Datasheet RQJ0602EGDQA R07DS0299EJ0500(Previous: REJ03G1273-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 490 m typ (VGS = 10 V, ID = 0.55 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

 8.3. Size:98K  renesas
 r07ds0300ej rqj0603lgd.pdf

RQJ0601DGDQS RQJ0601DGDQS

Preliminary Datasheet RQJ0603LGDQA R07DS0300EJ0500(Previous: REJ03G1274-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 158 m typ (VGS = 10 V, ID = 0.9 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

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