RQJ0601DGDQS Datasheet. Specs and Replacement

Type Designator: RQJ0601DGDQS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: UPAK SC62

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RQJ0601DGDQS datasheet

 0.1. Size:101K  renesas
 rej03g1266 rqj0601dgdqsds.pdf pdf_icon

RQJ0601DGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:110K  renesas
 rej03g1268 rqj0602egdqsds.pdf pdf_icon

RQJ0601DGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:83K  renesas
 r07ds0299ej rqj0602egd.pdf pdf_icon

RQJ0601DGDQS

Preliminary Datasheet RQJ0602EGDQA R07DS0299EJ0500 (Previous REJ03G1273-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 490 m typ (VGS = 10 V, ID = 0.55 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3... See More ⇒

 8.3. Size:98K  renesas
 r07ds0300ej rqj0603lgd.pdf pdf_icon

RQJ0601DGDQS

Preliminary Datasheet RQJ0603LGDQA R07DS0300EJ0500 (Previous REJ03G1274-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 158 m typ (VGS = 10 V, ID = 0.9 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 ... See More ⇒

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Detailed specifications: RQJ0302NGDQA, RQJ0303PGDQA, RQJ0304DQDQA, RQJ0304DQDQS, RQJ0305EQDQA, RQJ0305EQDQS, RQJ0306FQDQA, RQJ0306FQDQS, IRF4905, RQJ0602EGDQA, RQJ0602EGDQS, RQJ0603LGDQA, RQK0201QGDQA, RQK0202RGDQA, RQK0203SGDQA, RQK0204TGDQA, RQK0301FGDQS

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