RQK0603CGDQA Todos los transistores

 

RQK0603CGDQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQK0603CGDQA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.8 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.212 Ohm

Empaquetado / Estuche: MPAK

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RQK0603CGDQA Datasheet (PDF)

1.1. rej03g0577 rqk0603cgdqsds.pdf Size:104K _renesas

RQK0603CGDQA
RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. r07ds0307ej rqk0603cgd.pdf Size:103K _renesas

RQK0603CGDQA
RQK0603CGDQA

Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 (Previous: REJ03G1277-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 212 m? typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Ga

 4.1. rej03g0575 rqk0601agdqsds.pdf Size:104K _renesas

RQK0603CGDQA
RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1622 rqk0609cqdqsds.pdf Size:132K _renesas

RQK0603CGDQA
RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. r07ds0308ej rqk0604igd.pdf Size:110K _renesas

RQK0603CGDQA
RQK0603CGDQA

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 (Previous: REJ03G1496-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 111 m? typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS ? 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)

4.4. rej03g1621 rqk0608bqdqsds.pdf Size:133K _renesas

RQK0603CGDQA
RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. r07ds0309ej rqk0605jgd.pdf Size:84K _renesas

RQK0603CGDQA
RQK0603CGDQA

Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 (Previous: REJ03G1278-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 82 m? typ (VGS = 10 V, ID = 1.5 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. G

4.6. rej03g1620 rqk0607aqdqsds.pdf Size:134K _renesas

RQK0603CGDQA
RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. r07ds0310ej rqk0606kgd.pdf Size:111K _renesas

RQK0603CGDQA
RQK0603CGDQA

Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 (Previous: REJ03G1497-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 173 m? typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS ? 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPA

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
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