RQK0603CGDQA Datasheet. Specs and Replacement

Type Designator: RQK0603CGDQA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm

Package: SC59A MPAK

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RQK0603CGDQA substitution

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RQK0603CGDQA datasheet

 3.1. Size:104K  renesas
rej03g0577 rqk0603cgdqsds.pdf pdf_icon

RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 4.1. Size:103K  renesas
r07ds0307ej rqk0603cgd.pdf pdf_icon

RQK0603CGDQA

Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 (Previous REJ03G1277-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 212 m typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. Sou... See More ⇒

 8.1. Size:132K  renesas
rej03g1622 rqk0609cqdqsds.pdf pdf_icon

RQK0603CGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:110K  renesas
r07ds0308ej rqk0604igd.pdf pdf_icon

RQK0603CGDQA

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 (Previous REJ03G1496-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Packa... See More ⇒

Detailed specifications: RQK0202RGDQA, RQK0203SGDQA, RQK0204TGDQA, RQK0301FGDQS, RQK0302GGDQA, RQK0302GGDQS, RQK0303MGDQA, RQK0601AGDQS, IRFB3607, RQK0603CGDQS, RQK0604IGDQA, RQK0605JGDQA, RQK0606KGDQA, RQK0607AQDQS, RQK0608BQDQS, RQK0609CQDQS, RQK2001HQDQA

Keywords - RQK0603CGDQA MOSFET specs

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