RQK0603CGDQA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RQK0603CGDQA
Маркировка: CG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.8 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 2.8 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 24 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.265 Ohm
Тип корпуса: SC59A MPAK
Аналог (замена) для RQK0603CGDQA
RQK0603CGDQA Datasheet (PDF)
rej03g0577 rqk0603cgdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0307ej rqk0603cgd.pdf
Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500(Previous: REJ03G1277-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 212 m typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Sou
rej03g1622 rqk0609cqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0308ej rqk0604igd.pdf
Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200(Previous: REJ03G1496-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Packa
rej03g1620 rqk0607aqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0310ej rqk0606kgd.pdf
Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200(Previous: REJ03G1497-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 173 m typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Pac
rej03g1621 rqk0608bqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0309ej rqk0605jgd.pdf
Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500(Previous: REJ03G1278-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. S
rej03g0575 rqk0601agdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: GSM7002J
