All MOSFET. MDP14N25CTH Datasheet

 

MDP14N25CTH Datasheet and Replacement


   Type Designator: MDP14N25CTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 126.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220
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MDP14N25CTH Datasheet (PDF)

 ..1. Size:822K  magnachip
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MDP14N25CTH

MDP14N25C N-Channel MOSFET 250V, 14A, 0.28 General Description Features The MDP14N25C is produced using advanced MagnaChips V = 250V DSMOSFET Technology, which provides low on-state resistance, I = 14A @ V = 10V D GShigh switching performance and excellent quality. R 0.28 @ V = 10V DS(ON) GSThese devices are suitable device for SMPS, high Speed Appl

 ..2. Size:206K  inchange semiconductor
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MDP14N25CTH

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP14N25CTHFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXI

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History: VBNC1303 | IRFS4010PBF

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