RQA0011DNS Todos los transistores

 ..1. Size:219K  renesas
 r07ds0095ej rqa0011dns.pdf

Preliminary Datasheet RQA0011DNS R07DS0095EJ0500 Rev.5.00 Silicon N-Channel MOS FET Sep 08, 2011 Features High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) Small outline package (WSON0504-2 5.0 4.0 0.8 mm) Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS P

 8.1. Size:200K  renesas
 rej03g1693 rqa0010uxaqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:201K  renesas
 rej03g1692 rqa0010vxdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:151K  1
 rqa0008nxaqs.pdf

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2,

 9.2. Size:75K  1
 rqa0005aqs.pdf

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. Source 4 2 Note Marking is

 9.3. Size:143K  renesas
 r07ds0418ej rqa0004pxd.pdf

Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Silicon N-Channel MOS FET Sep 09, 2011 Features High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2, 4 Note Ma

 9.4. Size:141K  renesas
 r07ds0496ej rqa0004lxa.pdf

Preliminary Datasheet R07DS0496EJ0200 RQA0004LXAQS (Previous REJ03G1567-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 30, 2011 Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1.

 9.5. Size:217K  renesas
 r07ds0492ej rqa0009txd.pdf

Preliminary Datasheet R07DS0492EJ0200 RQA0009TXDQS (Previous REJ03G1520-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2

 9.6. Size:213K  renesas
 rej03g1326 rqa0008rxdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:217K  renesas
 r07ds0493ej rqa0009sxa.pdf

Preliminary Datasheet R07DS0493EJ0200 RQA0009SXAQS (Previous REJ03G1566-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2

 9.8. Size:166K  renesas
 rej03g1569 rqa0008nxaqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.9. Size:123K  renesas
 rej03g1568 rqa0005mxaqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:212K  renesas
 rej03g1325 rqa0005qxdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.