Справочник MOSFET. RQA0011DNS

 

RQA0011DNS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RQA0011DNS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 16 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: WSON05042
 

 Аналог (замена) для RQA0011DNS

   - подбор ⓘ MOSFET транзистора по параметрам

 

RQA0011DNS Datasheet (PDF)

 ..1. Size:219K  renesas
r07ds0095ej rqa0011dns.pdfpdf_icon

RQA0011DNS

Preliminary Datasheet RQA0011DNS R07DS0095EJ0500Rev.5.00Silicon N-Channel MOS FET Sep 08, 2011Features High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) Small outline package (WSON0504-2: 5.0 4.0 0.8 mm) Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS P

 8.1. Size:200K  renesas
rej03g1693 rqa0010uxaqsds.pdfpdf_icon

RQA0011DNS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:201K  renesas
rej03g1692 rqa0010vxdqsds.pdfpdf_icon

RQA0011DNS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:151K  1
rqa0008nxaqs.pdfpdf_icon

RQA0011DNS

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-AR(Package Name : UPAK )3121. Gate32. Source13. Drain4. Source42,

Другие MOSFET... 2SK1058 , 2SK2220 , 2SK2221 , 2SJ160 , 2SJ161 , 2SJ162 , 2SJ351 , 2SJ352 , AON7403 , RQA0004PXDQS , RQA0005QXDQS , RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS , RQA0008NXAQS .

History: 2SK1074 | STF13N60M2 | SP8M70 | PSMN5R6-100PS | SI7491DP | SIHFD014

 

 
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