RQA0011DNS Datasheet and Replacement
Type Designator: RQA0011DNS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Id| ⓘ - Maximum Drain Current: 3.8
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 50
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package: WSON05042
-
MOSFET ⓘ Cross-Reference Search
RQA0011DNS Datasheet (PDF)
..1. Size:219K renesas
r07ds0095ej rqa0011dns.pdf 
Preliminary Datasheet RQA0011DNS R07DS0095EJ0500Rev.5.00Silicon N-Channel MOS FET Sep 08, 2011Features High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) Small outline package (WSON0504-2: 5.0 4.0 0.8 mm) Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS P
8.1. Size:200K renesas
rej03g1693 rqa0010uxaqsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:201K renesas
rej03g1692 rqa0010vxdqsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:151K 1
rqa0008nxaqs.pdf 
RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-AR(Package Name : UPAK )3121. Gate32. Source13. Drain4. Source42,
9.2. Size:75K 1
rqa0005aqs.pdf 
RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A(Package Name: UPAK)3121. Gate31 2. Source3. Drain4. Source42Note: Marking is
9.3. Size:143K renesas
r07ds0418ej rqa0004pxd.pdf 
Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300Rev.3.00Silicon N-Channel MOS FET Sep 09, 2011Features High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A(Package Name : UPAK)3121. Gate32. Source13. Drain4. Source42, 4Note: Ma
9.4. Size:141K renesas
r07ds0496ej rqa0004lxa.pdf 
Preliminary Datasheet R07DS0496EJ0200RQA0004LXAQS (Previous: REJ03G1567-0100)Rev.2.00Silicon N-Channel MOS FET Jun 30, 2011Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A(Package Name : UPAK)3121.
9.5. Size:217K renesas
r07ds0492ej rqa0009txd.pdf 
Preliminary Datasheet R07DS0492EJ0200RQA0009TXDQS (Previous: REJ03G1520-0100)Rev.2.00Silicon N-Channel MOS FET Jun 28, 2011Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2
9.6. Size:213K renesas
rej03g1326 rqa0008rxdqsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.7. Size:217K renesas
r07ds0493ej rqa0009sxa.pdf 
Preliminary Datasheet R07DS0493EJ0200RQA0009SXAQS (Previous: REJ03G1566-0100)Rev.2.00Silicon N-Channel MOS FET Jun 28, 2011Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2
9.8. Size:166K renesas
rej03g1569 rqa0008nxaqsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.9. Size:123K renesas
rej03g1568 rqa0005mxaqsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.10. Size:212K renesas
rej03g1325 rqa0005qxdqsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SK1058
, 2SK2220
, 2SK2221
, 2SJ160
, 2SJ161
, 2SJ162
, 2SJ351
, 2SJ352
, AON7403
, RQA0004PXDQS
, RQA0005QXDQS
, RQA0010VXDQS
, RQA0008RXDQS
, RQA0009TXDQS
, RQA0004LXAQS
, RQA0005AQS
, RQA0008NXAQS
.
History: VBK1270
| BUK9M12-60E
| VBZA4407
| QM4014D
| IRF3709L
| QM2403C1
| TPD65R280D
Keywords - RQA0011DNS MOSFET datasheet
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