RQA0010VXDQS Todos los transistores

 

RQA0010VXDQS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RQA0010VXDQS
   Código: VX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 5 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.35 V
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.43 Ohm
   Paquete / Cubierta: UPAK SC62

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RQA0010VXDQS Datasheet (PDF)

 0.1. Size:201K  renesas
rej03g1692 rqa0010vxdqsds.pdf

RQA0010VXDQS
RQA0010VXDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:200K  renesas
rej03g1693 rqa0010uxaqsds.pdf

RQA0010VXDQS
RQA0010VXDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:219K  renesas
r07ds0095ej rqa0011dns.pdf

RQA0010VXDQS
RQA0010VXDQS

Preliminary Datasheet RQA0011DNS R07DS0095EJ0500Rev.5.00Silicon N-Channel MOS FET Sep 08, 2011Features High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) Small outline package (WSON0504-2: 5.0 4.0 0.8 mm) Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS P

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