RQA0010VXDQS MOSFET Datasheet: N-Ch, 16V, 1.2A. Full specification with pinout and replacement list

RQA0010VXDQS Specs and Replacement

Type Designator: RQA0010VXDQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.43 Ohm

Package: UPAK SC62

RQA0010VXDQS substitution

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RQA0010VXDQS datasheet

0.1. Size:201K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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8.1. Size:219K renesas
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Preliminary Datasheet RQA0011DNS R07DS0095EJ0500 Rev.5.00 Silicon N-Channel MOS FET Sep 08, 2011 Features High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) Small outline package (WSON0504-2 5.0 4.0 0.8 mm) Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS P... See More ⇒

Detailed specifications: 2SJ160, 2SJ161, 2SJ162, 2SJ351, 2SJ352, RQA0011DNS, RQA0004PXDQS, RQA0005QXDQS, K2611, RQA0008RXDQS, RQA0009TXDQS, RQA0004LXAQS, RQA0005AQS, RQA0008NXAQS, RQA0009SXAQS, RQA0010UXAQS, 2SJ661