RQA0009TXDQS Todos los transistores

 

RQA0009TXDQS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQA0009TXDQS

Código: TX

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente (Vds): 16 V

Tensión compuerta-fuente (Vgs): 5 V

Corriente continua de drenaje (Id): 3.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 40 pF

Resistencia drenaje-fuente RDS(on): 0.46 Ohm

Empaquetado / Estuche: UPAK

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RQA0009TXDQS Datasheet (PDF)

1.1. r07ds0492ej rqa0009txd.pdf Size:217K _renesas

RQA0009TXDQS
RQA0009TXDQS

Preliminary Datasheet R07DS0492EJ0200 RQA0009TXDQS (Previous: REJ03G1520-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features ? High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) ? Compact package capable of surface mounting ? Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

3.1. r07ds0493ej rqa0009sxa.pdf Size:217K _renesas

RQA0009TXDQS
RQA0009TXDQS

Preliminary Datasheet R07DS0493EJ0200 RQA0009SXAQS (Previous: REJ03G1566-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features ? High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) ? Compact package capable of surface mounting ? Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

 4.1. rej03g1325 rqa0005qxdqsds.pdf Size:212K _renesas

RQA0009TXDQS
RQA0009TXDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. r07ds0418ej rqa0004pxd.pdf Size:143K _renesas

RQA0009TXDQS
RQA0009TXDQS

Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Silicon N-Channel MOS FET Sep 09, 2011 Features ? High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) ? Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2, 4 Note: Marking i

 4.3. rej03g1326 rqa0008rxdqsds.pdf Size:213K _renesas

RQA0009TXDQS
RQA0009TXDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g1569 rqa0008nxaqsds.pdf Size:166K _renesas

RQA0009TXDQS
RQA0009TXDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. rej03g1568 rqa0005mxaqsds.pdf Size:123K _renesas

RQA0009TXDQS
RQA0009TXDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. r07ds0496ej rqa0004lxa.pdf Size:141K _renesas

RQA0009TXDQS
RQA0009TXDQS

Preliminary Datasheet R07DS0496EJ0200 RQA0004LXAQS (Previous: REJ03G1567-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 30, 2011 Features ? High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) ? Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK) 3 1 2 1. Gate 3

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