RQA0009TXDQS PDF and Equivalents Search

 

RQA0009TXDQS Specs and Replacement

Type Designator: RQA0009TXDQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: UPAK SC62

RQA0009TXDQS substitution

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RQA0009TXDQS datasheet

 4.1. Size:217K  renesas
r07ds0492ej rqa0009txd.pdf pdf_icon

RQA0009TXDQS

Preliminary Datasheet R07DS0492EJ0200 RQA0009TXDQS (Previous REJ03G1520-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2... See More ⇒

 7.1. Size:217K  renesas
r07ds0493ej rqa0009sxa.pdf pdf_icon

RQA0009TXDQS

Preliminary Datasheet R07DS0493EJ0200 RQA0009SXAQS (Previous REJ03G1566-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2... See More ⇒

 8.1. Size:151K  1
rqa0008nxaqs.pdf pdf_icon

RQA0009TXDQS

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2,... See More ⇒

 8.2. Size:75K  1
rqa0005aqs.pdf pdf_icon

RQA0009TXDQS

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. Source 4 2 Note Marking is ... See More ⇒

Detailed specifications: 2SJ162, 2SJ351, 2SJ352, RQA0011DNS, RQA0004PXDQS, RQA0005QXDQS, RQA0010VXDQS, RQA0008RXDQS, RU7088R, RQA0004LXAQS, RQA0005AQS, RQA0008NXAQS, RQA0009SXAQS, RQA0010UXAQS, 2SJ661, 2SJ665, 2SK3707

Keywords - RQA0009TXDQS MOSFET specs

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