CPH5617 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH5617
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 5.9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Paquete / Cubierta: CPH5
Búsqueda de reemplazo de CPH5617 MOSFET
CPH5617 Datasheet (PDF)
cph5617.pdf

Ordering number : EN7370A CPH5617SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH5617ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.SpecificationsAbsolute Maximum Ratings at Ta=25C
cph5611.pdf

Ordering number : ENN7154CPH5611N-Channel Silicon MOSFETCPH5611Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2168 2.5V drive.[CPH5611] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain1 2 :
cph5606.pdf

Ordering number:ENN*6451N-Channel and P-Channel Silicon MOSFETsCPH5606Ultrahigh-Speed Switching ApplicationsPreliminaryPackage DimensionsFeatures The CPH5606 incorporates on N-channel MOSFET unit:mmand a P-channel MOSFET that feature low ON2168resistance and high-speed switching, thereby en-[CPH5606]abling high-density mounting.2.90.15 4V drive.5 4 30.05
cph5604.pdf

Ordering number:ENN6440N-Channel Silicon MOSFETCPH5604Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 4V drive.[CPH5604] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 : Ga
Otros transistores... BBL4001 , BMS3003 , BMS3004 , BMS4003 , BXL4001 , CPH3350 , CPH3356 , CPH3360 , AON7410 , CPH6354 , CPH6355 , ECH8420 , ECH8656 , ECH8671 , ECH8672 , ECH8674 , ECH8675 .
History: SM6F03NSF | SMD15N05 | AP3800YT | 2SJ166 | AP3N018EYT | MTP12N10L | IRFP260MPBF
History: SM6F03NSF | SMD15N05 | AP3800YT | 2SJ166 | AP3N018EYT | MTP12N10L | IRFP260MPBF



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