CPH5617 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH5617
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 5.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Encapsulados: CPH5
Búsqueda de reemplazo de CPH5617 MOSFET
- Selecciónⓘ de transistores por parámetros
CPH5617 datasheet
cph5617.pdf
Ordering number EN7370A CPH5617 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH5617 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly. Specifications Absolute Maximum Ratings at Ta=25 C
cph5611.pdf
Ordering number ENN7154 CPH5611 N-Channel Silicon MOSFET CPH5611 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2168 2.5V drive. [CPH5611] Composite type with 2 MOSFETs contained in a 2.9 0.15 single package, facilitaing high-density mounting. 5 4 3 0.05 1 2 0.95 0.4 1 Drain1 2
cph5606.pdf
Ordering number ENN*6451 N-Channel and P-Channel Silicon MOSFETs CPH5606 Ultrahigh-Speed Switching Applications Preliminary Package Dimensions Features The CPH5606 incorporates on N-channel MOSFET unit mm and a P-channel MOSFET that feature low ON 2168 resistance and high-speed switching, thereby en- [CPH5606] abling high-density mounting. 2.9 0.15 4V drive. 5 4 3 0.05
cph5604.pdf
Ordering number ENN6440 N-Channel Silicon MOSFET CPH5604 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2168 4V drive. [CPH5604] Composite type with 2 MOSFETs contained in a 2.9 0.15 single package, facilitaing high-density mounting. 5 4 3 0.05 1 2 0.95 0.4 1 Drain1 2 Drain2 3 Ga
Otros transistores... BBL4001 , BMS3003 , BMS3004 , BMS4003 , BXL4001 , CPH3350 , CPH3356 , CPH3360 , 4435 , CPH6354 , CPH6355 , ECH8420 , ECH8656 , ECH8671 , ECH8672 , ECH8674 , ECH8675 .
History: IRLR8721PBF-1 | OSG55R074HSZF | 2SK1165 | APQ03SN60AB | 2SK3116 | SLD60R650S2 | SLD65R420S2
History: IRLR8721PBF-1 | OSG55R074HSZF | 2SK1165 | APQ03SN60AB | 2SK3116 | SLD60R650S2 | SLD65R420S2
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