CPH5617
MOSFET. Datasheet pdf. Equivalent
Type Designator: CPH5617
Marking Code: FZ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 0.15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.58
nC
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 5.9
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7
Ohm
Package: CPH5
CPH5617
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CPH5617
Datasheet (PDF)
..1. Size:51K sanyo
cph5617.pdf 
Ordering number : EN7370A CPH5617SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH5617ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.SpecificationsAbsolute Maximum Ratings at Ta=25C
8.1. Size:29K sanyo
cph5611.pdf
Ordering number : ENN7154CPH5611N-Channel Silicon MOSFETCPH5611Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2168 2.5V drive.[CPH5611] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain1 2 :
9.1. Size:60K sanyo
cph5606.pdf
Ordering number:ENN*6451N-Channel and P-Channel Silicon MOSFETsCPH5606Ultrahigh-Speed Switching ApplicationsPreliminaryPackage DimensionsFeatures The CPH5606 incorporates on N-channel MOSFET unit:mmand a P-channel MOSFET that feature low ON2168resistance and high-speed switching, thereby en-[CPH5606]abling high-density mounting.2.90.15 4V drive.5 4 30.05
9.2. Size:42K sanyo
cph5604.pdf
Ordering number:ENN6440N-Channel Silicon MOSFETCPH5604Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 4V drive.[CPH5604] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 : Ga
9.3. Size:42K sanyo
cph5601.pdf
Ordering number:ENN6439P-Channel Silicon MOSFETCPH5601Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 2.5V drive.[CPH5601] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 :
9.4. Size:42K sanyo
cph5603.pdf
Ordering number:ENN6388P-Channel Silicon MOSFETCPH5603Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 4V drive.[CPH5603] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 : Ga
9.5. Size:42K sanyo
cph5602.pdf
Ordering number:ENN6368N-Channel Silicon MOSFETCPH5602Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 2.5V drive.[CPH5602] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 :
9.6. Size:42K sanyo
cph5608.pdf
Ordering number:ENN6442AN-Channel Silicon MOSFETCPH5608Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 2.5V drive.[CPH5608] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 :
9.7. Size:60K sanyo
cph5605.pdf
Ordering number:ENN6441N-Channel and P-Channel Silicon MOSFETsCPH5605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions The CPH5605 incorporates an N-channel MOSFETunit:mmand a P-channel MOSFET that feature low ON2168resistance and high-speed switching, thereby en-[CPH5605]abling high-density mounting.2.90.15 2.5V drive.5 4 30.051 20.95 0
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