All MOSFET. CPH5617 Datasheet

 

CPH5617 Datasheet and Replacement


   Type Designator: CPH5617
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
   Package: CPH5
 

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CPH5617 Datasheet (PDF)

 ..1. Size:51K  sanyo
cph5617.pdf pdf_icon

CPH5617

Ordering number : EN7370A CPH5617SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH5617ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.SpecificationsAbsolute Maximum Ratings at Ta=25C

 8.1. Size:29K  sanyo
cph5611.pdf pdf_icon

CPH5617

Ordering number : ENN7154CPH5611N-Channel Silicon MOSFETCPH5611Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2168 2.5V drive.[CPH5611] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain1 2 :

 9.1. Size:60K  sanyo
cph5606.pdf pdf_icon

CPH5617

Ordering number:ENN*6451N-Channel and P-Channel Silicon MOSFETsCPH5606Ultrahigh-Speed Switching ApplicationsPreliminaryPackage DimensionsFeatures The CPH5606 incorporates on N-channel MOSFET unit:mmand a P-channel MOSFET that feature low ON2168resistance and high-speed switching, thereby en-[CPH5606]abling high-density mounting.2.90.15 4V drive.5 4 30.05

 9.2. Size:42K  sanyo
cph5604.pdf pdf_icon

CPH5617

Ordering number:ENN6440N-Channel Silicon MOSFETCPH5604Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2168 4V drive.[CPH5604] Composite type with 2 MOSFETs contained in a2.90.15single package, facilitaing high-density mounting.5 4 30.051 20.95 0.41 : Drain12 : Drain23 : Ga

Datasheet: BBL4001 , BMS3003 , BMS3004 , BMS4003 , BXL4001 , CPH3350 , CPH3356 , CPH3360 , 2SK3568 , CPH6354 , CPH6355 , ECH8420 , ECH8656 , ECH8671 , ECH8672 , ECH8674 , ECH8675 .

History: VBZE30N10 | P2610BT | DMN3035LWN | IRF7N1405 | IPD040N03LG | IPB34CN10N | FQD2N50TF

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