BUZ901X4S Todos los transistores

 

BUZ901X4S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ901X4S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

BUZ901X4S Datasheet (PDF)

 ..1. Size:35K  magnatec
 buz900x4s buz901x4s.pdf pdf_icon

BUZ901X4S

BUZ900X4SMAGNABUZ901X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.

 8.1. Size:45K  magnatec
 buz900dp buz901dp.pdf pdf_icon

BUZ901X4S

BUZ900DPMAGNABUZ901DPTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 NCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D

 8.2. Size:63K  magnatec
 buz900 buz901.pdf pdf_icon

BUZ901X4S

BUZ900www.DataSheet4U.comMAGNABUZ901TECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY

 8.3. Size:44K  magnatec
 buz900d buz901d.pdf pdf_icon

BUZ901X4S

BUZ900DMAGNABUZ901DTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

MOSTRAR MÁS

Otros transistores... BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP , BUZ901P , 2N60 , BUZ902 , BUZ902D , BUZ902DP , BUZ902P , BUZ903 , BUZ903D , BUZ903DP , BUZ903P .

History: WMQ15DN04TS | KRF7343 | FDMS3660AS | SFF140Z | UT20N03 | WPM4801 | S68N08ZRN

 

 
Back to Top

 


 
.