BUZ901X4S PDF and Equivalents Search

 ..1. Size:35K  magnatec
 buz900x4s buz901x4s.pdf

BUZ900X4S MAGNA BUZ901X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.... See More ⇒

 8.1. Size:45K  magnatec
 buz900dp buz901dp.pdf

BUZ900DP MAGNA BUZ901DP TEC MECHANICAL DATA Dimensions in mm N CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 N CHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION D... See More ⇒

 8.2. Size:63K  magnatec
 buz900 buz901.pdf

BUZ900 www.DataSheet4U.com MAGNA BUZ901 TEC MECHANICAL DATA Dimensions in mm N CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING N CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 0.1 R 4.4 0.2 HIGH ENERGY... See More ⇒

 8.3. Size:44K  magnatec
 buz900d buz901d.pdf

BUZ900D MAGNA BUZ901D TEC MECHANICAL DATA Dimensions in mm N CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING N CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC... See More ⇒

 8.4. Size:42K  magnatec
 buz900p buz901p.pdf

BUZ900P MAGNA BUZ901P TEC MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) N CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.1... See More ⇒

 8.5. Size:232K  inchange semiconductor
 buz901d.pdf

isc N-Channel MOSFET Transistor BUZ901D FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒