FKP253 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FKP253
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET FKP253

FKP253 Datasheet (PDF)

..1. Size:307K sanken-ele
fkp253.pdf

N-Channel MOS FET FKP253 June, 2007 Features Package---FM20 (TO220 Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage VDS

..2. Size:255K inchange semiconductor
fkp253.pdf

isc N-Channel MOSFET Transistor FKP253FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.1. Size:337K sanken-ele
fkp252.pdf

MOSFET FKP252 December. 2005 Package---TO220F Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to Source Voltage VDSS 250 VGate

9.2. Size:308K sanken-ele
fkp250a.pdf

N-Channel MOS FET FKP250A June, 2007 Features Package---FM100 (TO-3P Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage V

9.3. Size:254K inchange semiconductor
fkp252.pdf

isc N-Channel MOSFET Transistor FKP252FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.4. Size:264K inchange semiconductor
fkp250a.pdf

isc N-Channel MOSFET Transistor FKP250AFEATURESDrain Current I =50A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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