FKP253 PDF and Equivalents Search

 ..1. Size:307K  sanken-ele
 fkp253.pdf

N-Channel MOS FET FKP253 June, 2007 Features Package---FM20 (TO220 Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25 C Parameter Symbol Rating Unit Drain to Source Voltage VDS... See More ⇒

 ..2. Size:255K  inchange semiconductor
 fkp253.pdf

isc N-Channel MOSFET Transistor FKP253 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒

 9.1. Size:337K  sanken-ele
 fkp252.pdf

MOSFET FKP252 December. 2005 Package---TO220F Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit Drain to Source Voltage VDSS 250 V Gate ... See More ⇒

 9.2. Size:308K  sanken-ele
 fkp250a.pdf

N-Channel MOS FET FKP250A June, 2007 Features Package---FM100 (TO-3P Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25 C Parameter Symbol Rating Unit Drain to Source Voltage V... See More ⇒

 9.3. Size:254K  inchange semiconductor
 fkp252.pdf

isc N-Channel MOSFET Transistor FKP252 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒

 9.4. Size:264K  inchange semiconductor
 fkp250a.pdf

isc N-Channel MOSFET Transistor FKP250A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 43m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒