Справочник MOSFET. FKP253

 

FKP253 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FKP253
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FKP253

 

 

FKP253 Datasheet (PDF)

 ..1. Size:307K  sanken-ele
 fkp253.pdf

FKP253 FKP253

N-Channel MOS FET FKP253 June, 2007 Features Package---FM20 (TO220 Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage VDS

 ..2. Size:255K  inchange semiconductor
 fkp253.pdf

FKP253 FKP253

isc N-Channel MOSFET Transistor FKP253FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.1. Size:337K  sanken-ele
 fkp252.pdf

FKP253 FKP253

MOSFET FKP252 December. 2005 Package---TO220F Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to Source Voltage VDSS 250 VGate

 9.2. Size:308K  sanken-ele
 fkp250a.pdf

FKP253 FKP253

N-Channel MOS FET FKP250A June, 2007 Features Package---FM100 (TO-3P Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage V

 9.3. Size:254K  inchange semiconductor
 fkp252.pdf

FKP253 FKP253

isc N-Channel MOSFET Transistor FKP252FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.4. Size:264K  inchange semiconductor
 fkp250a.pdf

FKP253 FKP253

isc N-Channel MOSFET Transistor FKP250AFEATURESDrain Current I =50A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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