R6018ANJ Todos los transistores

 ..1. Size:1172K  rohm
 r6018anj.pdf

Data Sheet 10V Drive Nch MOSFET R6018ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide SOA. 2.7 5.08 (1) Gate (1) (2) (3) 4) Drive circuits can be simple. (2) Drain (3) Source 5) Parallel use is easy. Application Switching Packaging specifi

 7.1. Size:1063K  rohm
 r6018anx.pdf

R6018ANX Nch 600V 18A Power MOSFET Datasheet Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.27 ID 18A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead

 9.1. Size:2181K  rohm
 r6018jnx.pdf

R6018JNX Datasheet Nch 600V 18A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.286 ID 18A PD 72W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l l

 9.2. Size:252K  inchange semiconductor
 r6018jnx.pdf

isc N-Channel MOSFET Transistor R6018JNX FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 286m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo