All MOSFET. R6018ANJ Datasheet

 

R6018ANJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6018ANJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: LPTS

 R6018ANJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6018ANJ Datasheet (PDF)

 ..1. Size:1172K  rohm
 r6018anj.pdf

R6018ANJ R6018ANJ

Data Sheet10V Drive Nch MOSFET R6018ANJ Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High-speed switching.2.54 0.40.783) Wide SOA.2.75.08(1) Gate(1) (2) (3)4) Drive circuits can be simple. (2) Drain(3) Source5) Parallel use is easy. ApplicationSwitching Packaging specifi

 7.1. Size:1063K  rohm
 r6018anx.pdf

R6018ANJ R6018ANJ

R6018ANXNch 600V 18A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.27ID18APD50W(1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead

 9.1. Size:2181K  rohm
 r6018jnx.pdf

R6018ANJ R6018ANJ

R6018JNXDatasheetNch 600V 18A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.286ID18APD72W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationll

 9.2. Size:252K  inchange semiconductor
 r6018jnx.pdf

R6018ANJ R6018ANJ

isc N-Channel MOSFET Transistor R6018JNXFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 286m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTA42N15T | SSH8N55

 

 
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