All MOSFET. R6018ANJ Datasheet

 

R6018ANJ MOSFET. Datasheet pdf. Equivalent

Type Designator: R6018ANJ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 85 nS

Drain-Source Capacitance (Cd): 1400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm

Package: LPTS

R6018ANJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6018ANJ Datasheet (PDF)

1.1. r6018anj.pdf Size:1172K _rohm

R6018ANJ
R6018ANJ

Data Sheet 10V Drive Nch MOSFET R6018ANJ ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 ?Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide SOA. 2.7 5.08 (1) Gate (1) (2) (3) 4) Drive circuits can be simple. (2) Drain (3) Source 5) Parallel use is easy. ? Application Switching ? Packaging specifications ? Inn

3.1. r6018anx.pdf Size:1063K _rohm

R6018ANJ
R6018ANJ

R6018ANX Nch 600V 18A Power MOSFET Datasheet ?Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.27? ID 18A PD 50W (1)(2)(3) ?Features ?Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; R

 

Datasheet: R6010ANX , R6012ANJ , R6012ANX , R6012FNX , R6015ANJ , R6015ANX , R6015ANZ , R6015FNX , BUZ90 , R6018ANX , R6020ANJ , R6020ANX , R6020ANZ , R6020FNX , R6025ANZ , R6046ANZ , R6046FNZ .

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